Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SUM110N04-03-E3
Herstellerteilenummer | SUM110N04-03-E3 |
---|---|
Zukünftige Teilenummer | FT-SUM110N04-03-E3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SUM110N04-03-E3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 40V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 110A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.8 mOhm @ 30A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 250nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 8250pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 3.75W (Ta), 375W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-263 (D2Pak) |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SUM110N04-03-E3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SUM110N04-03-E3-FT |
SIR688DP-T1-GE3
Vishay Siliconix
SIR788DP-T1-GE3
Vishay Siliconix
SIR802DP-T1-GE3
Vishay Siliconix
SIR804DP-T1-GE3
Vishay Siliconix
SIR808DP-T1-GE3
Vishay Siliconix
SIR812DP-T1-GE3
Vishay Siliconix
SIR814DP-T1-GE3
Vishay Siliconix
SIR818DP-T1-GE3
Vishay Siliconix
SIR826ADP-T1-GE3
Vishay Siliconix
SIR826DP-T1-GE3
Vishay Siliconix
A3P030-2QNG68I
Microsemi Corporation
A1425A-1PQ100I
Microsemi Corporation
XC4052XL-09HQ304C
Xilinx Inc.
A3P125-2PQ208I
Microsemi Corporation
A3P250L-VQG100I
Microsemi Corporation
EP3CLS100F484C7
Intel
EP2AGX125DF25C4N
Intel
EP2AGX65DF25C5
Intel
5CEBA5U19C8N
Intel
EP1C20F324I7N
Intel