Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / TK290P65Y,RQ
Herstellerteilenummer | TK290P65Y,RQ |
---|---|
Zukünftige Teilenummer | FT-TK290P65Y,RQ |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | DTMOSV |
TK290P65Y,RQ Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 650V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 11.5A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 290 mOhm @ 5.8A, 10V |
Vgs (th) (Max) @ Id | 4V @ 450µA |
Gateladung (Qg) (Max) @ Vgs | 25nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 730pF @ 300V |
FET-Funktion | - |
Verlustleistung (max.) | 100W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | DPAK |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TK290P65Y,RQ Gewicht | kontaktiere uns |
Ersatzteilnummer | TK290P65Y,RQ-FT |
TK62N60X,S1F
Toshiba Semiconductor and Storage
TK31N60X,S1F
Toshiba Semiconductor and Storage
TK040N65Z,S1F
Toshiba Semiconductor and Storage
TK39N60W,S1VF
Toshiba Semiconductor and Storage
TK28N65W,S1F
Toshiba Semiconductor and Storage
TK39N60X,S1F
Toshiba Semiconductor and Storage
TK14N65W,S1F
Toshiba Semiconductor and Storage
TK20N60W5,S1VF
Toshiba Semiconductor and Storage
TK14N65W5,S1F
Toshiba Semiconductor and Storage
TK62N60W,S1VF
Toshiba Semiconductor and Storage
XC3S200-4FTG256I
Xilinx Inc.
XC4020XL-1PQ208C
Xilinx Inc.
M1AFS250-FG256
Microsemi Corporation
10M40DCF256C7G
Intel
5SGSED8K2F40I2N
Intel
XC2V2000-5FF896I
Xilinx Inc.
M2GL060T-FGG676
Microsemi Corporation
A40MX04-PQG100M
Microsemi Corporation
LFEC15E-5F484C
Lattice Semiconductor Corporation
EP1SGX40GF1020I6
Intel