Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / TK55D10J1(Q)
Herstellerteilenummer | TK55D10J1(Q) |
---|---|
Zukünftige Teilenummer | FT-TK55D10J1(Q) |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
TK55D10J1(Q) Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 55A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 10.5 mOhm @ 27A, 10V |
Vgs (th) (Max) @ Id | 2.3V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 110nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 5700pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 140W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220(W) |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TK55D10J1(Q) Gewicht | kontaktiere uns |
Ersatzteilnummer | TK55D10J1(Q)-FT |
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