Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / TK6Q65W,S1Q
Herstellerteilenummer | TK6Q65W,S1Q |
---|---|
Zukünftige Teilenummer | FT-TK6Q65W,S1Q |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | DTMOSIV |
TK6Q65W,S1Q Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 650V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 5.8A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.05 Ohm @ 2.9A, 10V |
Vgs (th) (Max) @ Id | 3.5V @ 180µA |
Gateladung (Qg) (Max) @ Vgs | 11nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 390pF @ 300V |
FET-Funktion | - |
Verlustleistung (max.) | 60W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | I-PAK |
Paket / fall | TO-251-3 Stub Leads, IPak |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TK6Q65W,S1Q Gewicht | kontaktiere uns |
Ersatzteilnummer | TK6Q65W,S1Q-FT |
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