Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / TK9A60D(STA4,Q,M)
Herstellerteilenummer | TK9A60D(STA4,Q,M) |
---|---|
Zukünftige Teilenummer | FT-TK9A60D(STA4,Q,M) |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | π-MOSVII |
TK9A60D(STA4,Q,M) Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 9A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 830 mOhm @ 4.5A, 10V |
Vgs (th) (Max) @ Id | 4V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 24nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 1200pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 45W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220SIS |
Paket / fall | TO-220-3 Full Pack |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TK9A60D(STA4,Q,M) Gewicht | kontaktiere uns |
Ersatzteilnummer | TK9A60D(STA4,Q,M)-FT |
TK40E10N1,S1X
Toshiba Semiconductor and Storage
TK72E08N1,S1X
Toshiba Semiconductor and Storage
TK16E60W,S1VX
Toshiba Semiconductor and Storage
TK30E06N1,S1X
Toshiba Semiconductor and Storage
TK58E06N1,S1X
Toshiba Semiconductor and Storage
TK14E65W,S1X
Toshiba Semiconductor and Storage
TK10E60W,S1VX
Toshiba Semiconductor and Storage
TK12E60W,S1VX
Toshiba Semiconductor and Storage
TK16E60W5,S1VX
Toshiba Semiconductor and Storage
TK17E65W,S1X
Toshiba Semiconductor and Storage
XA6SLX45-3FGG484Q
Xilinx Inc.
A42MX36-2BGG272I
Microsemi Corporation
M2GL090-FGG484
Microsemi Corporation
MPF300T-1FCG1152E
Microsemi Corporation
LCMXO1200E-4FT256C
Lattice Semiconductor Corporation
EP3SL200F1517C2N
Intel
5SGXMA3K2F35I3N
Intel
XC5VSX50T-1FFG665C
Xilinx Inc.
LFE3-95E-7FN1156C
Lattice Semiconductor Corporation
MPM7128SQC100AC
Intel