Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / TP2635N3-G
Herstellerteilenummer | TP2635N3-G |
---|---|
Zukünftige Teilenummer | FT-TP2635N3-G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
TP2635N3-G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 350V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 180mA (Tj) |
Antriebsspannung (Max Rds On, Min Rds On) | 2.5V, 10V |
Rds On (Max) @ Id, Vgs | 15 Ohm @ 300mA, 10V |
Vgs (th) (Max) @ Id | 2V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 300pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 1W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-92-3 |
Paket / fall | TO-226-3, TO-92-3 (TO-226AA) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TP2635N3-G Gewicht | kontaktiere uns |
Ersatzteilnummer | TP2635N3-G-FT |
IRF5805TR
Infineon Technologies
IRF5805TRPBF
Infineon Technologies
IRF5806
Infineon Technologies
IRF5806TRPBF
Infineon Technologies
SI3443DVTRPBF
Infineon Technologies
SI3493DDV-T1-GE3
Vishay Siliconix
TPC6006-H(TE85L,F)
Toshiba Semiconductor and Storage
TPC6008-H(TE85L,FM
Toshiba Semiconductor and Storage
TPC6009-H(TE85L,FM
Toshiba Semiconductor and Storage
TPC6010-H(TE85L,FM
Toshiba Semiconductor and Storage
AT40K40AL-1BQI
Microchip Technology
XC4005XL-3PQ100C
Xilinx Inc.
APA600-BG456I
Microsemi Corporation
A42MX36-1PQG208I
Microsemi Corporation
EP2S15F484C3
Intel
EP1S10F484C7N
Intel
EP1K30FC256-2
Intel
EP2AGX45DF25I5
Intel
LFE2M70SE-6F900I
Lattice Semiconductor Corporation
LFXP2-5E-7M132C
Lattice Semiconductor Corporation