Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / TPN4R303NL,L1Q
Herstellerteilenummer | TPN4R303NL,L1Q |
---|---|
Zukünftige Teilenummer | FT-TPN4R303NL,L1Q |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | U-MOSVIII-H |
TPN4R303NL,L1Q Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 40A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.3 mOhm @ 20A, 10V |
Vgs (th) (Max) @ Id | 2.3V @ 200µA |
Gateladung (Qg) (Max) @ Vgs | 14.8nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1400pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 700mW (Ta), 34W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-TSON Advance (3.3x3.3) |
Paket / fall | 8-PowerVDFN |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TPN4R303NL,L1Q Gewicht | kontaktiere uns |
Ersatzteilnummer | TPN4R303NL,L1Q-FT |
2SK3564(STA4,Q,M)
Toshiba Semiconductor and Storage
TK6A65D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK20A60U(Q,M)
Toshiba Semiconductor and Storage
TK8A65D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK12A60U(Q,M)
Toshiba Semiconductor and Storage
TK3A60DA(Q,M)
Toshiba Semiconductor and Storage
2SK3566(STA4,Q,M)
Toshiba Semiconductor and Storage
TK8A10K3,S5Q
Toshiba Semiconductor and Storage
2SK3565(Q,M)
Toshiba Semiconductor and Storage
2SK3868(Q,M)
Toshiba Semiconductor and Storage
XC6SLX100T-N3FG900C
Xilinx Inc.
M2GL050TS-1FGG484I
Microsemi Corporation
EP2A40F672C7
Intel
EP3SL200F1517C4
Intel
XC7A200T-2FB484I
Xilinx Inc.
XC6VCX195T-1FFG1156I
Xilinx Inc.
LFEC33E-3FN484C
Lattice Semiconductor Corporation
EPF10K10LC84-4
Intel
EPF81188ARC240-2
Intel
EP1C12Q240C7
Intel