Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / TSM60N900CH C5G
Herstellerteilenummer | TSM60N900CH C5G |
---|---|
Zukünftige Teilenummer | FT-TSM60N900CH C5G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
TSM60N900CH C5G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Not For New Designs |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 4.5A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 900 mOhm @ 2.3A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 9.7nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 480pF @ 100V |
FET-Funktion | - |
Verlustleistung (max.) | 50W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-251 (IPAK) |
Paket / fall | TO-251-3 Short Leads, IPak, TO-251AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TSM60N900CH C5G Gewicht | kontaktiere uns |
Ersatzteilnummer | TSM60N900CH C5G-FT |
TPN30008NH,LQ
Toshiba Semiconductor and Storage
TPN11003NL,LQ
Toshiba Semiconductor and Storage
TPN11006NL,LQ
Toshiba Semiconductor and Storage
TPN13008NH,L1Q
Toshiba Semiconductor and Storage
TPN14006NH,L1Q
Toshiba Semiconductor and Storage
TPN1600ANH,L1Q
Toshiba Semiconductor and Storage
TPN2R203NC,L1Q
Toshiba Semiconductor and Storage
TPN4R203NC,L1Q
Toshiba Semiconductor and Storage
TPN5900CNH,L1Q
Toshiba Semiconductor and Storage
TPN6R003NL,LQ
Toshiba Semiconductor and Storage
LFEC3E-4T144C
Lattice Semiconductor Corporation
A42MX24-3PQ208
Microsemi Corporation
5SGXMA9N3F45I3N
Intel
XCS40-4BG256C
Xilinx Inc.
XC6SLX16-3CSG324C
Xilinx Inc.
APA750-FGG676I
Microsemi Corporation
LFXP2-8E-6FTN256I
Lattice Semiconductor Corporation
LFX125EB-03F256I
Lattice Semiconductor Corporation
LFEC33E-3FN484C
Lattice Semiconductor Corporation
5CGXFC3B7U15C8N
Intel