Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Single / 2SD2206(T6CNO,A,F)
Herstellerteilenummer | 2SD2206(T6CNO,A,F) |
---|---|
Zukünftige Teilenummer | FT-2SD2206(T6CNO,A,F) |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
2SD2206(T6CNO,A,F) Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
Transistortyp | NPN |
Stromabnehmer (Ic) (max.) | 2A |
Spannung - Durchschlag Kollektoremitter (max.) | 100V |
Vce-Sättigung (max.) @ Ib, Ic | 1.5V @ 1mA, 1A |
Strom - Kollektorabschaltung (max.) | 10µA (ICBO) |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 2000 @ 1A, 2V |
Leistung max | 900mW |
Frequenz - Übergang | 100MHz |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Through Hole |
Paket / fall | TO-226-3, TO-92-3 Long Body |
Supplier Device Package | TO-92MOD |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SD2206(T6CNO,A,F) Gewicht | kontaktiere uns |
Ersatzteilnummer | 2SD2206(T6CNO,A,F)-FT |
2SA965-O(TE6,F,M)
Toshiba Semiconductor and Storage
2SA965-O,F(J
Toshiba Semiconductor and Storage
2SA965-Y(F,M)
Toshiba Semiconductor and Storage
2SA965-Y(T6CANO,FM
Toshiba Semiconductor and Storage
2SA965-Y,F(J
Toshiba Semiconductor and Storage
2SA965-Y,SWFF(M
Toshiba Semiconductor and Storage
2SA965-Y,T6F(J
Toshiba Semiconductor and Storage
2SA965-Y,T6KOJPF(J
Toshiba Semiconductor and Storage
2SB1457(T6CANO,F,M
Toshiba Semiconductor and Storage
2SB1457(T6CNO,A,F)
Toshiba Semiconductor and Storage
XC6SLX100-3FG484I
Xilinx Inc.
A3P1000-2PQG208
Microsemi Corporation
5SGXEA5N2F45C2LN
Intel
5SGXMABK3H40C2LN
Intel
EP1AGX60EF1152I6N
Intel
EP3SL200F1152I4N
Intel
XC7K325T-2FFG900I
Xilinx Inc.
LFE3-70EA-7LFN1156C
Lattice Semiconductor Corporation
10AX057H2F34E1SG
Intel
EP4SGX180FF35C2X
Intel