Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Single / 2SD2206,T6F(J
Herstellerteilenummer | 2SD2206,T6F(J |
---|---|
Zukünftige Teilenummer | FT-2SD2206,T6F(J |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
2SD2206,T6F(J Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
Transistortyp | NPN |
Stromabnehmer (Ic) (max.) | 2A |
Spannung - Durchschlag Kollektoremitter (max.) | 100V |
Vce-Sättigung (max.) @ Ib, Ic | 1.5V @ 1mA, 1A |
Strom - Kollektorabschaltung (max.) | 10µA (ICBO) |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 2000 @ 1A, 2V |
Leistung max | 900mW |
Frequenz - Übergang | 100MHz |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Through Hole |
Paket / fall | TO-226-3, TO-92-3 Long Body |
Supplier Device Package | TO-92MOD |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SD2206,T6F(J Gewicht | kontaktiere uns |
Ersatzteilnummer | 2SD2206,T6F(J-FT |
2SA965-Y(F,M)
Toshiba Semiconductor and Storage
2SA965-Y(T6CANO,FM
Toshiba Semiconductor and Storage
2SA965-Y,F(J
Toshiba Semiconductor and Storage
2SA965-Y,SWFF(M
Toshiba Semiconductor and Storage
2SA965-Y,T6F(J
Toshiba Semiconductor and Storage
2SA965-Y,T6KOJPF(J
Toshiba Semiconductor and Storage
2SB1457(T6CANO,F,M
Toshiba Semiconductor and Storage
2SB1457(T6CNO,A,F)
Toshiba Semiconductor and Storage
2SB1457(T6DW,F,M)
Toshiba Semiconductor and Storage
2SB1457(TE6,F,M)
Toshiba Semiconductor and Storage
APA300-FG256M
Microsemi Corporation
A42MX16-1PQG208
Microsemi Corporation
A54SX32A-1PQG208
Microsemi Corporation
5SGXEB6R2F43I3N
Intel
5SGXEA5K2F35I2LN
Intel
XC4VLX80-11FF1148I
Xilinx Inc.
AGLP060V2-CS289I
Microsemi Corporation
LFE2-6SE-5FN256I
Lattice Semiconductor Corporation
EP1S40F780C6
Intel
EP1S40F780C8
Intel