Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / 2SJ652-RA11
Herstellerteilenummer | 2SJ652-RA11 |
---|---|
Zukünftige Teilenummer | FT-2SJ652-RA11 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
2SJ652-RA11 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 28A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 38 mOhm @ 14A, 10V |
Vgs (th) (Max) @ Id | - |
Gateladung (Qg) (Max) @ Vgs | 80nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 4360pF @ 20V |
FET-Funktion | - |
Verlustleistung (max.) | - |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220ML |
Paket / fall | TO-220-3 Full Pack |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SJ652-RA11 Gewicht | kontaktiere uns |
Ersatzteilnummer | 2SJ652-RA11-FT |
RCX511N25
Rohm Semiconductor
IRFI9634GPBF
Vishay Siliconix
RCX160N20
Rohm Semiconductor
TK10A80W,S4X
Toshiba Semiconductor and Storage
TK1K9A60F,S4X
Toshiba Semiconductor and Storage
IPA093N06N3GXKSA1
Infineon Technologies
R6009ENX
Rohm Semiconductor
TK10A60W5,S5VX
Toshiba Semiconductor and Storage
TK20A60W,S5VX
Toshiba Semiconductor and Storage
RCX220N25
Rohm Semiconductor
LCMXO256C-4T100I
Lattice Semiconductor Corporation
A54SX32A-FGG484
Microsemi Corporation
XC2V1500-6BGG575C
Xilinx Inc.
XC7K355T-1FFG901I
Xilinx Inc.
XC5VTX150T-1FFG1156I
Xilinx Inc.
LFXP3E-5QN208C
Lattice Semiconductor Corporation
LCMXO2-4000HE-6MG184C
Lattice Semiconductor Corporation
LFE3-95EA-6LFN484C
Lattice Semiconductor Corporation
10AX090N2F45I2SG
Intel
EP2AGX190EF29I5
Intel