Herstellerteilenummer | 3N256 |
---|---|
Zukünftige Teilenummer | FT-3N256 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
3N256 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
Diodentyp | Single Phase |
Technologie | Standard |
Spannung - Peak Reverse (Max) | 400V |
Strom - Durchschnitt gleichgerichtet (Io) | 2A |
Spannung - Vorwärts (Vf) (Max) @ If | 1.1V @ 3.14A |
Strom - Rückwärtsleckage @ Vr | 5µA @ 400V |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Paket / fall | 4-SIP, KBPM |
Supplier Device Package | KBPM |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
3N256 Gewicht | kontaktiere uns |
Ersatzteilnummer | 3N256-FT |
KBU6M
GeneSiC Semiconductor
KBU8J
GeneSiC Semiconductor
KBU6B
GeneSiC Semiconductor
KBU6D
GeneSiC Semiconductor
KBU8A
GeneSiC Semiconductor
KBPC5010T
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KBPC15005T
GeneSiC Semiconductor
KBPC15010T
GeneSiC Semiconductor
KBPC1501T
GeneSiC Semiconductor
KBPC1502T
GeneSiC Semiconductor
XC6SLX9-N3FT256I
Xilinx Inc.
XCV400-6FG676C
Xilinx Inc.
M7A3P1000-1FG484
Microsemi Corporation
LCMXO2280E-4FTN256I
Lattice Semiconductor Corporation
EP3C25U256I7N
Intel
5SGXMBBR2H43C2N
Intel
LFE3-70E-8FN1156I
Lattice Semiconductor Corporation
LCMXO640E-3MN100C
Lattice Semiconductor Corporation
LFE3-70EA-9FN484I
Lattice Semiconductor Corporation
EP2AGX125EF35C4N
Intel