Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / CSD16327Q3T
Herstellerteilenummer | CSD16327Q3T |
---|---|
Zukünftige Teilenummer | FT-CSD16327Q3T |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | NexFET™ |
CSD16327Q3T Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 25V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 60A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 3V, 8V |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 24A, 8V |
Vgs (th) (Max) @ Id | 1.4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 8.4nC @ 4.5V |
Vgs (Max) | +10V, -8V |
Eingangskapazität (Ciss) (Max) @ Vds | 1300pF @ 12.5V |
FET-Funktion | - |
Verlustleistung (max.) | 74W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-VSON-CLIP (3.3x3.3) |
Paket / fall | 8-PowerTDFN |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
CSD16327Q3T Gewicht | kontaktiere uns |
Ersatzteilnummer | CSD16327Q3T-FT |
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