Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / CSD25202W15
Herstellerteilenummer | CSD25202W15 |
---|---|
Zukünftige Teilenummer | FT-CSD25202W15 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | NexFET™ |
CSD25202W15 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 4A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 2A, 4.5V |
Vgs (th) (Max) @ Id | 1.05V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 7.5nC @ 4.5V |
Vgs (Max) | -6V |
Eingangskapazität (Ciss) (Max) @ Vds | 1010pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 500mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 9-DSBGA |
Paket / fall | 9-UFBGA, DSBGA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
CSD25202W15 Gewicht | kontaktiere uns |
Ersatzteilnummer | CSD25202W15-FT |
TPH1R712MD,L1Q
Toshiba Semiconductor and Storage
TPH2010FNH,L1Q
Toshiba Semiconductor and Storage
TPH2900ENH,L1Q
Toshiba Semiconductor and Storage
TPH2R306NH,L1Q
Toshiba Semiconductor and Storage
TPH2R506PL,L1Q
Toshiba Semiconductor and Storage
TPH2R608NH,L1Q
Toshiba Semiconductor and Storage
TPH3300CNH,L1Q
Toshiba Semiconductor and Storage
TPH3R704PL,L1Q
Toshiba Semiconductor and Storage
TPH4R50ANH,L1Q
Toshiba Semiconductor and Storage
TPH5200FNH,L1Q
Toshiba Semiconductor and Storage
XC6SLX150-3FG676I
Xilinx Inc.
XC3S1400A-5FG484C
Xilinx Inc.
AGL600V5-FG484I
Microsemi Corporation
LAXP2-8E-5FTN256E
Lattice Semiconductor Corporation
LCMXO2-1200HC-5SG32C
Lattice Semiconductor Corporation
A40MX04-3PL68I
Microsemi Corporation
5SGSED8N2F45I2
Intel
5SGXEBBR2H43I3L
Intel
LFEC10E-3F256C
Lattice Semiconductor Corporation
EPF10K10QC208-3N
Intel