Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / CSD19531Q5AT
Herstellerteilenummer | CSD19531Q5AT |
---|---|
Zukünftige Teilenummer | FT-CSD19531Q5AT |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | NexFET™ |
CSD19531Q5AT Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 100A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 6.4 mOhm @ 16A, 10V |
Vgs (th) (Max) @ Id | 3.3V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 48nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 3870pF @ 50V |
FET-Funktion | - |
Verlustleistung (max.) | 3.3W (Ta), 125W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-VSONP (5x6) |
Paket / fall | 8-PowerTDFN |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
CSD19531Q5AT Gewicht | kontaktiere uns |
Ersatzteilnummer | CSD19531Q5AT-FT |
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