Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / CSD86336Q3DT
Herstellerteilenummer | CSD86336Q3DT |
---|---|
Zukünftige Teilenummer | FT-CSD86336Q3DT |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | NexFET™ |
CSD86336Q3DT Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 N-Channel (Half Bridge) |
FET-Funktion | Logic Level Gate, 5V Drive |
Drain-Source-Spannung (Vdss) | 25V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 20A (Ta) |
Rds On (Max) @ Id, Vgs | 9.1 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V |
Vgs (th) (Max) @ Id | 1.9V @ 250µA, 1.6V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 3.8nC @ 45V, 7.4nC @ 45V |
Eingangskapazität (Ciss) (Max) @ Vds | 494pF @ 12.5V, 970pF @ 12.5V |
Leistung max | 6W |
Betriebstemperatur | -55°C ~ 125°C |
Befestigungsart | Surface Mount |
Paket / fall | 8-PowerTDFN |
Supplier Device Package | 8-VSON (3.3x3.3) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
CSD86336Q3DT Gewicht | kontaktiere uns |
Ersatzteilnummer | CSD86336Q3DT-FT |
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