Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / APTM100DA33T1G
Herstellerteilenummer | APTM100DA33T1G |
---|---|
Zukünftige Teilenummer | FT-APTM100DA33T1G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
APTM100DA33T1G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 1000V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 23A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 396 mOhm @ 18A, 10V |
Vgs (th) (Max) @ Id | 5V @ 2.5mA |
Gateladung (Qg) (Max) @ Vgs | 305nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 7868pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 390W (Tc) |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Chassis Mount |
Supplier Device Package | SP1 |
Paket / fall | SP1 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
APTM100DA33T1G Gewicht | kontaktiere uns |
Ersatzteilnummer | APTM100DA33T1G-FT |
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