Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Einfach, vorgespann / DTC123JMT2L
Herstellerteilenummer | DTC123JMT2L |
---|---|
Zukünftige Teilenummer | FT-DTC123JMT2L |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
DTC123JMT2L Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Transistortyp | NPN - Pre-Biased |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 2.2 kOhms |
Widerstand - Emitterbasis (R2) | 47 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 80 @ 10mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 250µA, 5mA |
Strom - Kollektorabschaltung (max.) | 500nA |
Frequenz - Übergang | 250MHz |
Leistung max | 150mW |
Befestigungsart | Surface Mount |
Paket / fall | SOT-723 |
Supplier Device Package | VMT3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTC123JMT2L Gewicht | kontaktiere uns |
Ersatzteilnummer | DTC123JMT2L-FT |
RN1108(T5L,F,T)
Toshiba Semiconductor and Storage
RN1109(T5L,F,T)
Toshiba Semiconductor and Storage
RN1110(T5L,F,T)
Toshiba Semiconductor and Storage
RN1112(T5L,F,T)
Toshiba Semiconductor and Storage
RN1114(T5L,F,T)
Toshiba Semiconductor and Storage
RN1116(TE85L,F)
Toshiba Semiconductor and Storage
RN1117(T5L,F,T)
Toshiba Semiconductor and Storage
RN1118(T5L,F,T)
Toshiba Semiconductor and Storage
RN2103(T5L,F,T)
Toshiba Semiconductor and Storage
RN2104(T5L,F,T)
Toshiba Semiconductor and Storage
XC6SLX4-L1TQG144I
Xilinx Inc.
XC2S30-5VQ100I
Xilinx Inc.
XC6SLX25-N3FGG484I
Xilinx Inc.
APA600-FG484
Microsemi Corporation
APA450-FG256
Microsemi Corporation
EP20K30EFC144-3
Intel
5AGZME1E3H29I4N
Intel
XA6SLX9-2CSG225Q
Xilinx Inc.
LFE3-35EA-7FN672C
Lattice Semiconductor Corporation
EP1S80F1020I7N
Intel