Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - RF / EC4H09C-TL-H
Herstellerteilenummer | EC4H09C-TL-H |
---|---|
Zukünftige Teilenummer | FT-EC4H09C-TL-H |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
EC4H09C-TL-H Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
Transistortyp | NPN |
Spannung - Durchschlag Kollektoremitter (max.) | 3.5V |
Frequenz - Übergang | 26GHz |
Rauschzahl (dB Typ @ f) | 1.3dB @ 2GHz |
Gewinnen | 15dB |
Leistung max | 120mW |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 70 @ 5mA, 1V |
Stromabnehmer (Ic) (max.) | 40mA |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | 4-UFDFN |
Supplier Device Package | 4-ECSP1008 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
EC4H09C-TL-H Gewicht | kontaktiere uns |
Ersatzteilnummer | EC4H09C-TL-H-FT |
2SC4215-Y(TE85L,F)
Toshiba Semiconductor and Storage
2SC5065-O(TE85L,F)
Toshiba Semiconductor and Storage
2SC5085-O(TE85L,F)
Toshiba Semiconductor and Storage
2SC5085-Y(TE85L,F)
Toshiba Semiconductor and Storage
2SC5095-O(TE85L,F)
Toshiba Semiconductor and Storage
2SC5095-R(TE85L,F)
Toshiba Semiconductor and Storage
2SC4215-O(TE85L,F)
Toshiba Semiconductor and Storage
HN3C10FUTE85LF
Toshiba Semiconductor and Storage
MT3S111P(TE12L,F)
Toshiba Semiconductor and Storage
MT3S113P(TE12L,F)
Toshiba Semiconductor and Storage
LCMXO2-2000ZE-3TG100C
Lattice Semiconductor Corporation
XC3S200A-5FTG256C
Xilinx Inc.
AGLN020V5-UCG81
Microsemi Corporation
APA600-CQ352M
Microsemi Corporation
LCMXO2-4000ZE-2QN84C
Lattice Semiconductor Corporation
LFE5U-85F-7BG554C
Lattice Semiconductor Corporation
XC7A35T-3CPG236E
Xilinx Inc.
LFEC33E-3F484I
Lattice Semiconductor Corporation
ICE40LP384-CM49TR
Lattice Semiconductor Corporation
EP20K1000EBC652-1X
Intel