Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / EMD29T2R
Herstellerteilenummer | EMD29T2R |
---|---|
Zukünftige Teilenummer | FT-EMD29T2R |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
EMD29T2R Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Transistortyp | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Stromabnehmer (Ic) (max.) | 100mA, 500mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V, 12V |
Widerstand - Basis (R1) | 1 kOhms, 10 kOhms |
Widerstand - Emitterbasis (R2) | 10 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 30 @ 5mA, 5V / 140 @ 100mA, 2V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA |
Strom - Kollektorabschaltung (max.) | 500nA |
Frequenz - Übergang | 250MHz, 260MHz |
Leistung max | 120mW |
Befestigungsart | Surface Mount |
Paket / fall | SOT-563, SOT-666 |
Supplier Device Package | EMT6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMD29T2R Gewicht | kontaktiere uns |
Ersatzteilnummer | EMD29T2R-FT |
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