Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / RN1901,LF(CT
Herstellerteilenummer | RN1901,LF(CT |
---|---|
Zukünftige Teilenummer | FT-RN1901,LF(CT |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RN1901,LF(CT Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Transistortyp | 2 NPN - Pre-Biased (Dual) |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 4.7 kOhms |
Widerstand - Emitterbasis (R2) | 1 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 30 @ 10mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 250µA, 5mA |
Strom - Kollektorabschaltung (max.) | 100nA (ICBO) |
Frequenz - Übergang | 250MHz |
Leistung max | 200mW |
Befestigungsart | Surface Mount |
Paket / fall | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN1901,LF(CT Gewicht | kontaktiere uns |
Ersatzteilnummer | RN1901,LF(CT-FT |
RN2905FE,LF(CT
Toshiba Semiconductor and Storage
RN4904FE,LF(CT
Toshiba Semiconductor and Storage
RN4981FE,LF(CT
Toshiba Semiconductor and Storage
RN4982FE,LF(CT
Toshiba Semiconductor and Storage
RN4983FE,LF(CT
Toshiba Semiconductor and Storage
RN4984FE,LF(CT
Toshiba Semiconductor and Storage
RN4986FE,LF(CT
Toshiba Semiconductor and Storage
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
RN4990FE,LF(CT
Toshiba Semiconductor and Storage
RN1901FETE85LF
Toshiba Semiconductor and Storage
LCMXO2-4000HE-4TG144I
Lattice Semiconductor Corporation
XC3S1200E-4FT256C
Xilinx Inc.
XCV400-5FG676C
Xilinx Inc.
XC7A50T-1CSG325C
Xilinx Inc.
M1A3P1000-FG256
Microsemi Corporation
EP4SE360H29C2N
Intel
5SGSMD8N3F45C2N
Intel
5SGXMA7H1F35C2LN
Intel
XC7K420T-3FFG1156E
Xilinx Inc.
LFX125EB-05F256C
Lattice Semiconductor Corporation