Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / EMD30T2R
Herstellerteilenummer | EMD30T2R |
---|---|
Zukünftige Teilenummer | FT-EMD30T2R |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
EMD30T2R Status (Lebenszyklus) | Auf Lager |
Teilestatus | Not For New Designs |
Transistortyp | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Stromabnehmer (Ic) (max.) | 100mA, 200mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V, 30V |
Widerstand - Basis (R1) | 10 kOhms, 1 kOhms |
Widerstand - Emitterbasis (R2) | 10 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 30 @ 5mA, 5V / 140 @ 100mA, 2V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 500µA, 10mA / 300mV @ 2.5mA, 50mA |
Strom - Kollektorabschaltung (max.) | 500nA |
Frequenz - Übergang | 250MHz, 260MHz |
Leistung max | 150mW |
Befestigungsart | Surface Mount |
Paket / fall | SOT-563, SOT-666 |
Supplier Device Package | EMT6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMD30T2R Gewicht | kontaktiere uns |
Ersatzteilnummer | EMD30T2R-FT |
RN2903,LF
Toshiba Semiconductor and Storage
RN2904(T5L,F,T)
Toshiba Semiconductor and Storage
RN2904,LF
Toshiba Semiconductor and Storage
RN2905,LF(CT
Toshiba Semiconductor and Storage
RN2906(T5L,F,T)
Toshiba Semiconductor and Storage
RN2907(T5L,F,T)
Toshiba Semiconductor and Storage
RN2908(T5L,F,T)
Toshiba Semiconductor and Storage
RN2909(T5L,F,T)
Toshiba Semiconductor and Storage
RN2910(T5L,F,T)
Toshiba Semiconductor and Storage
RN2911(T5L,F,T)
Toshiba Semiconductor and Storage
LCMXO2-640UHC-5TG144I
Lattice Semiconductor Corporation
A42MX36-1BGG272M
Microsemi Corporation
A54SX72A-1PQ208
Microsemi Corporation
ICE40UP5K-UWG30ITR
Lattice Semiconductor Corporation
LCMXO2-4000HC-5QN84I
Lattice Semiconductor Corporation
EPF8452ATC100-3N
Intel
EP20K60EFC144-3
Intel
5SGXMA9N3F45C2N
Intel
LFE3-70E-8FN484I
Lattice Semiconductor Corporation
10AX032E2F29I1SG
Intel