Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / EMF17T2R
Herstellerteilenummer | EMF17T2R |
---|---|
Zukünftige Teilenummer | FT-EMF17T2R |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
EMF17T2R Status (Lebenszyklus) | Auf Lager |
Teilestatus | Not For New Designs |
Transistortyp | 1 NPN Pre-Biased, 1 PNP |
Stromabnehmer (Ic) (max.) | 100mA, 150mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 2.2 kOhms |
Widerstand - Emitterbasis (R2) | 2.2 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 20 @ 20mA, 5V / 180 @ 1mA, 6V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA |
Strom - Kollektorabschaltung (max.) | 500nA |
Frequenz - Übergang | 250MHz, 140MHz |
Leistung max | 150mW |
Befestigungsart | Surface Mount |
Paket / fall | SOT-563, SOT-666 |
Supplier Device Package | EMT6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMF17T2R Gewicht | kontaktiere uns |
Ersatzteilnummer | EMF17T2R-FT |
RN2904(T5L,F,T)
Toshiba Semiconductor and Storage
RN2904,LF
Toshiba Semiconductor and Storage
RN2905,LF(CT
Toshiba Semiconductor and Storage
RN2906(T5L,F,T)
Toshiba Semiconductor and Storage
RN2907(T5L,F,T)
Toshiba Semiconductor and Storage
RN2908(T5L,F,T)
Toshiba Semiconductor and Storage
RN2909(T5L,F,T)
Toshiba Semiconductor and Storage
RN2910(T5L,F,T)
Toshiba Semiconductor and Storage
RN2911(T5L,F,T)
Toshiba Semiconductor and Storage
RN4901(T5L,F,T)
Toshiba Semiconductor and Storage
XC2VP50-5FF1517C
Xilinx Inc.
XC3S2000-4FGG456C
Xilinx Inc.
APA600-PQ208
Microsemi Corporation
5SGXEB6R2F43C3
Intel
EP2SGX60EF1152C3N
Intel
A1010B-PLG44C
Microsemi Corporation
XC4028EX-2HQ208C
Xilinx Inc.
XC4VFX60-11FFG1152I
Xilinx Inc.
LFE3-95EA-8LFN1156C
Lattice Semiconductor Corporation
LFXP2-40E-6FN484C
Lattice Semiconductor Corporation