Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / EMF8T2R
Herstellerteilenummer | EMF8T2R |
---|---|
Zukünftige Teilenummer | FT-EMF8T2R |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
EMF8T2R Status (Lebenszyklus) | Auf Lager |
Teilestatus | Not For New Designs |
Transistortyp | 1 NPN Pre-Biased, 1 NPN |
Stromabnehmer (Ic) (max.) | 100mA, 500mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V, 12V |
Widerstand - Basis (R1) | 47 kOhms |
Widerstand - Emitterbasis (R2) | 47 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 68 @ 5mA, 5V / 270 @ 10mA, 2V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA |
Strom - Kollektorabschaltung (max.) | 500nA |
Frequenz - Übergang | 250MHz, 320MHz |
Leistung max | 150mW |
Befestigungsart | Surface Mount |
Paket / fall | SOT-563, SOT-666 |
Supplier Device Package | EMT6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMF8T2R Gewicht | kontaktiere uns |
Ersatzteilnummer | EMF8T2R-FT |
RN2907(T5L,F,T)
Toshiba Semiconductor and Storage
RN2908(T5L,F,T)
Toshiba Semiconductor and Storage
RN2909(T5L,F,T)
Toshiba Semiconductor and Storage
RN2910(T5L,F,T)
Toshiba Semiconductor and Storage
RN2911(T5L,F,T)
Toshiba Semiconductor and Storage
RN4901(T5L,F,T)
Toshiba Semiconductor and Storage
RN4901,LF
Toshiba Semiconductor and Storage
RN4902,LF
Toshiba Semiconductor and Storage
RN4903(T5L,F,T)
Toshiba Semiconductor and Storage
RN4904(T5L,F,T)
Toshiba Semiconductor and Storage
M2GL090-FG484
Microsemi Corporation
AGL600V5-FGG256
Microsemi Corporation
EP3C16E144I7N
Intel
5SGXEA7H2F35I3LN
Intel
LFE2-35E-6F672I
Lattice Semiconductor Corporation
LCMXO640E-5MN132C
Lattice Semiconductor Corporation
5CEBA7U19C7N
Intel
10AX066H4F34I3LG
Intel
10AX115N3F40I2SGE2
Intel
EP2SGX130GF40C4ES
Intel