Herstellerteilenummer | EPC2110 |
---|---|
Zukünftige Teilenummer | FT-EPC2110 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | eGaN® |
EPC2110 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 N-Channel (Dual) Common Source |
FET-Funktion | GaNFET (Gallium Nitride) |
Drain-Source-Spannung (Vdss) | 120V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 3.4A |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 4A, 5V |
Vgs (th) (Max) @ Id | 2.5V @ 700µA |
Gateladung (Qg) (Max) @ Vgs | 0.8nC @ 5V |
Eingangskapazität (Ciss) (Max) @ Vds | 80pF @ 60V |
Leistung max | - |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | - |
Paket / fall | Die |
Supplier Device Package | Die |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
EPC2110 Gewicht | kontaktiere uns |
Ersatzteilnummer | EPC2110-FT |
IRFHE4250DTRPBF
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