Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / FDG6301N-F085P
Herstellerteilenummer | FDG6301N-F085P |
---|---|
Zukünftige Teilenummer | FT-FDG6301N-F085P |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101 |
FDG6301N-F085P Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 N-Channel (Dual) |
FET-Funktion | Logic Level Gate |
Drain-Source-Spannung (Vdss) | 25V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 220mA (Ta) |
Rds On (Max) @ Id, Vgs | 4 Ohm @ 220mA, 4.5V |
Vgs (th) (Max) @ Id | 1.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 0.4nC @ 4.5V |
Eingangskapazität (Ciss) (Max) @ Vds | 9.5pF @ 10V |
Leistung max | 300mW |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-70-6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDG6301N-F085P Gewicht | kontaktiere uns |
Ersatzteilnummer | FDG6301N-F085P-FT |
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