Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / FDG6303N_G
Herstellerteilenummer | FDG6303N_G |
---|---|
Zukünftige Teilenummer | FT-FDG6303N_G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
FDG6303N_G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | 2 N-Channel (Dual) |
FET-Funktion | Logic Level Gate |
Drain-Source-Spannung (Vdss) | 25V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 500mA |
Rds On (Max) @ Id, Vgs | 450 mOhm @ 500mA, 4.5V |
Vgs (th) (Max) @ Id | 1.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 2.3nC @ 4.5V |
Eingangskapazität (Ciss) (Max) @ Vds | 50pF @ 10V |
Leistung max | 300mW |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88 (SC-70-6) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDG6303N_G Gewicht | kontaktiere uns |
Ersatzteilnummer | FDG6303N_G-FT |
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