Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / FMG9AT148
Herstellerteilenummer | FMG9AT148 |
---|---|
Zukünftige Teilenummer | FT-FMG9AT148 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
FMG9AT148 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Transistortyp | 2 NPN - Pre-Biased (Dual) |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 10 kOhms |
Widerstand - Emitterbasis (R2) | 10 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 30 @ 5mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 500µA, 10mA |
Strom - Kollektorabschaltung (max.) | 500nA |
Frequenz - Übergang | 250MHz |
Leistung max | 300mW |
Befestigungsart | Surface Mount |
Paket / fall | SC-74A, SOT-753 |
Supplier Device Package | SMT5 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FMG9AT148 Gewicht | kontaktiere uns |
Ersatzteilnummer | FMG9AT148-FT |
RN2703JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2704JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2705JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2707JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2708JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2710JE(TE85L,F)
Toshiba Semiconductor and Storage
RN1706JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2706JE(TE85L,F)
Toshiba Semiconductor and Storage
RN1509(TE85L,F)
Toshiba Semiconductor and Storage
RN1510(TE85L,F)
Toshiba Semiconductor and Storage
A3P125-1TQ144
Microsemi Corporation
EP20K100ETC144-2N
Intel
XC6SLX100-2FG484C
Xilinx Inc.
LCMXO3L-2100C-5BG324I
Lattice Semiconductor Corporation
5SEE9H40I2LN
Intel
EP2SGX60EF1152C5N
Intel
XC6VLX195T-L1FF784I
Xilinx Inc.
XC6VLX75T-L1FFG784C
Xilinx Inc.
XC6VHX250T-2FFG1154I
Xilinx Inc.
5AGXBB7D4F35C5N
Intel