Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQB4N20TM
Herstellerteilenummer | FQB4N20TM |
---|---|
Zukünftige Teilenummer | FT-FQB4N20TM |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQB4N20TM Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 200V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 3.6A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 1.8A, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 6.5nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 220pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 3.13W (Ta), 45W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQB4N20TM Gewicht | kontaktiere uns |
Ersatzteilnummer | FQB4N20TM-FT |
FDB12N50UTM_WS
ON Semiconductor
FDB14AN06LA0
ON Semiconductor
FDB20AN06A0
ON Semiconductor
FDB24AN06LA0
ON Semiconductor
FDB2570
ON Semiconductor
FDB2670
ON Semiconductor
FDB3632_SB82115
ON Semiconductor
FDB3652
ON Semiconductor
FDB3652-F085
ON Semiconductor
FDB3672
ON Semiconductor
A3PE600-2FGG484I
Microsemi Corporation
M1A3P600-2PQ208
Microsemi Corporation
LFE3-35EA-8LFTN256C
Lattice Semiconductor Corporation
AGLN060V5-ZVQ100
Microsemi Corporation
10M25DAF256C7G
Intel
EP3SE260F1152I3
Intel
LCMXO640C-4M100C
Lattice Semiconductor Corporation
EP3SE110F780C2
Intel
10AX048E2F29I1HG
Intel
EP20K60EQC208-1
Intel