Herstellerteilenummer | FQP4N20 |
---|---|
Zukünftige Teilenummer | FT-FQP4N20 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQP4N20 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 200V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 3.6A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 1.8A, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 6.5nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 220pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 45W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220-3 |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQP4N20 Gewicht | kontaktiere uns |
Ersatzteilnummer | FQP4N20-FT |
FCP260N60E
ON Semiconductor
FCP380N60E
ON Semiconductor
FCP400N80Z
ON Semiconductor
FCP7N60_F080
ON Semiconductor
FCP850N80Z
ON Semiconductor
FDP027N08B
ON Semiconductor
FDP032N08B-F102
ON Semiconductor
FDP039N08B-F102
ON Semiconductor
FDP040N06
ON Semiconductor
FDP045N10A
ON Semiconductor
XC2VP4-6FGG256C
Xilinx Inc.
XC4052XL-3HQ304C
Xilinx Inc.
XC2V250-6FGG456C
Xilinx Inc.
M1A3P600-1FGG484
Microsemi Corporation
A42MX36-PQ208I
Microsemi Corporation
M2GL090TS-1FGG676I
Microsemi Corporation
LFEC10E-4QN208I
Lattice Semiconductor Corporation
EP1K100QC208-3N
Intel
EP4SGX180FF35C2XN
Intel
EP1SGX25DF1020C6
Intel