Herstellerteilenummer | FQP9N50 |
---|---|
Zukünftige Teilenummer | FT-FQP9N50 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQP9N50 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 500V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 9A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 730 mOhm @ 4.5A, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 36nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 1450pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 147W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220-3 |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQP9N50 Gewicht | kontaktiere uns |
Ersatzteilnummer | FQP9N50-FT |
FDP8443
ON Semiconductor
FDP86363-F085
ON Semiconductor
FDP8870-F085
ON Semiconductor
FDP8876
ON Semiconductor
FDP8878
ON Semiconductor
FQP10N20
ON Semiconductor
FQP10N20CTSTU
ON Semiconductor
FQP10N60C
ON Semiconductor
FQP11N40
ON Semiconductor
FQP11N50CF
ON Semiconductor
XCV1000E-8FG900C
Xilinx Inc.
LCMXO640C-4FTN256I
Lattice Semiconductor Corporation
LCMXO3L-9400C-5BG484I
Lattice Semiconductor Corporation
M1AGL250V2-VQ100
Microsemi Corporation
M1AGL250V5-VQG100
Microsemi Corporation
EP2S60F484C5
Intel
5SGXMA7K3F40C3
Intel
XC4020E-2HQ208I
Xilinx Inc.
5AGXMA7G4F35I5N
Intel
EPF8820QC160-4
Intel