Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / HAT2160H-EL-E
Herstellerteilenummer | HAT2160H-EL-E |
---|---|
Zukünftige Teilenummer | FT-HAT2160H-EL-E |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
HAT2160H-EL-E Status (Lebenszyklus) | Auf Lager |
Teilestatus | Not For New Designs |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 60A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 2.6 mOhm @ 30A, 10V |
Vgs (th) (Max) @ Id | 2.3V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 54nC @ 4.5V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 7750pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 30W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | LFPAK |
Paket / fall | SC-100, SOT-669 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
HAT2160H-EL-E Gewicht | kontaktiere uns |
Ersatzteilnummer | HAT2160H-EL-E-FT |
RS1E240GNTB
Rohm Semiconductor
RS1E200GNTB
Rohm Semiconductor
RS1E280GNTB
Rohm Semiconductor
RS1G300GNTB
Rohm Semiconductor
RS1E130GNTB
Rohm Semiconductor
RS1E150GNTB
Rohm Semiconductor
RS1E170GNTB
Rohm Semiconductor
RS1E180BNTB
Rohm Semiconductor
RS1E200BNTB
Rohm Semiconductor
RS1E240BNTB
Rohm Semiconductor
LCMXO2-7000HE-6TG144I
Lattice Semiconductor Corporation
XC6SLX25-N3FGG484I
Xilinx Inc.
M2GL090T-FG484
Microsemi Corporation
M7A3P1000-PQ208
Microsemi Corporation
5SGXEB5R3F43C3N
Intel
XC4VFX40-10FF1152I
Xilinx Inc.
A40MX04-1PLG84M
Microsemi Corporation
A42MX16-2PL84I
Microsemi Corporation
LFXP2-30E-7FN484C
Lattice Semiconductor Corporation
5CGXFC4C6U19I7N
Intel