Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / HUF75637S3S
Herstellerteilenummer | HUF75637S3S |
---|---|
Zukünftige Teilenummer | FT-HUF75637S3S |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | UltraFET™ |
HUF75637S3S Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 44A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 30 mOhm @ 44A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 108nC @ 20V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1700pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 155W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
HUF75637S3S Gewicht | kontaktiere uns |
Ersatzteilnummer | HUF75637S3S-FT |
FQB17P10TM
ON Semiconductor
FQB19N10LTM
ON Semiconductor
FQB19N10TM
ON Semiconductor
FQB1N60TM
ON Semiconductor
FQB20N06LTM
ON Semiconductor
FQB20N06TM
ON Semiconductor
FQB22P10TM-F085
ON Semiconductor
FQB24N08TM
ON Semiconductor
FQB25N33TM
ON Semiconductor
FQB27N25TM_AM002
ON Semiconductor
XC2VP4-6FGG256C
Xilinx Inc.
XC4052XL-3HQ304C
Xilinx Inc.
XC2V250-6FGG456C
Xilinx Inc.
M1A3P600-1FGG484
Microsemi Corporation
A42MX36-PQ208I
Microsemi Corporation
M2GL090TS-1FGG676I
Microsemi Corporation
LFEC10E-4QN208I
Lattice Semiconductor Corporation
EP1K100QC208-3N
Intel
EP4SGX180FF35C2XN
Intel
EP1SGX25DF1020C6
Intel