Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / HUF75639S3S
Herstellerteilenummer | HUF75639S3S |
---|---|
Zukünftige Teilenummer | FT-HUF75639S3S |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | UltraFET™ |
HUF75639S3S Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 56A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 56A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 130nC @ 20V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2000pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 200W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
HUF75639S3S Gewicht | kontaktiere uns |
Ersatzteilnummer | HUF75639S3S-FT |
FQB1N60TM
ON Semiconductor
FQB20N06LTM
ON Semiconductor
FQB20N06TM
ON Semiconductor
FQB22P10TM-F085
ON Semiconductor
FQB24N08TM
ON Semiconductor
FQB25N33TM
ON Semiconductor
FQB27N25TM_AM002
ON Semiconductor
FQB2N30TM
ON Semiconductor
FQB2N50TM
ON Semiconductor
FQB2N60TM
ON Semiconductor
EP1C6T144C6
Intel
LCMXO2-1200ZE-3TG144IR1
Lattice Semiconductor Corporation
A42MX09-FVQ100
Microsemi Corporation
EP4CE10E22C7N
Intel
XC5VLX30-1FF676I
Xilinx Inc.
AGL600V2-FG144
Microsemi Corporation
LCMXO2-7000HC-6BG256C
Lattice Semiconductor Corporation
LFXP2-8E-5MN132C
Lattice Semiconductor Corporation
5AGXMA1D4F31I3N
Intel
EP4CE55F29C6
Intel