Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / IMB7AT108
Herstellerteilenummer | IMB7AT108 |
---|---|
Zukünftige Teilenummer | FT-IMB7AT108 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
IMB7AT108 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Not For New Designs |
Transistortyp | 2 PNP - Pre-Biased (Dual) |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 4.7 kOhms |
Widerstand - Emitterbasis (R2) | - |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 100 @ 1mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 250µA, 5mA |
Strom - Kollektorabschaltung (max.) | - |
Frequenz - Übergang | - |
Leistung max | 300mW |
Befestigungsart | Surface Mount |
Paket / fall | SOT-457 |
Supplier Device Package | SOT-457 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IMB7AT108 Gewicht | kontaktiere uns |
Ersatzteilnummer | IMB7AT108-FT |
RN2713JE(TE85L,F)
Toshiba Semiconductor and Storage
RN1703JE(TE85L,F)
Toshiba Semiconductor and Storage
RN1705JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2701JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2703JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2704JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2705JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2707JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2708JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2710JE(TE85L,F)
Toshiba Semiconductor and Storage
XC3SD1800A-4CS484I
Xilinx Inc.
XC3042L-8VQ100C
Xilinx Inc.
5SGXMA7K2F35C2LN
Intel
A42MX16-3PLG84
Microsemi Corporation
A42MX09-TQ176A
Microsemi Corporation
LFXP2-17E-5FTN256C
Lattice Semiconductor Corporation
EP2AGX95EF29C4
Intel
EP3CLS70F780C7N
Intel
10AX027E1F27E1HG
Intel
EP20K100QC240-3N
Intel