Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / IMB7AT108
Herstellerteilenummer | IMB7AT108 |
---|---|
Zukünftige Teilenummer | FT-IMB7AT108 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
IMB7AT108 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Not For New Designs |
Transistortyp | 2 PNP - Pre-Biased (Dual) |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 4.7 kOhms |
Widerstand - Emitterbasis (R2) | - |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 100 @ 1mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 250µA, 5mA |
Strom - Kollektorabschaltung (max.) | - |
Frequenz - Übergang | - |
Leistung max | 300mW |
Befestigungsart | Surface Mount |
Paket / fall | SOT-457 |
Supplier Device Package | SOT-457 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IMB7AT108 Gewicht | kontaktiere uns |
Ersatzteilnummer | IMB7AT108-FT |
RN2713JE(TE85L,F)
Toshiba Semiconductor and Storage
RN1703JE(TE85L,F)
Toshiba Semiconductor and Storage
RN1705JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2701JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2703JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2704JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2705JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2707JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2708JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2710JE(TE85L,F)
Toshiba Semiconductor and Storage
XCKU5P-3FFVA676E
Xilinx Inc.
EP2C50U484C7N
Intel
EP3C55F484C8
Intel
5SGXMA4K1F35C1N
Intel
XC6VHX250T-1FF1154I
Xilinx Inc.
XC6VSX475T-2FFG1156E
Xilinx Inc.
A54SX32A-FBG329
Microsemi Corporation
LCMXO3LF-9400C-5BG256C
Lattice Semiconductor Corporation
EP2AGX260EF29I3N
Intel
EPF6016AFC100-2
Intel