Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPB80N06S2L-H5
Herstellerteilenummer | IPB80N06S2L-H5 |
---|---|
Zukünftige Teilenummer | FT-IPB80N06S2L-H5 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
IPB80N06S2L-H5 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 55V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 80A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.7 mOhm @ 80A, 10V |
Vgs (th) (Max) @ Id | 2V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 190nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 5000pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 300W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPB80N06S2L-H5 Gewicht | kontaktiere uns |
Ersatzteilnummer | IPB80N06S2L-H5-FT |
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