Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPD60R3K4CEAUMA1
Herstellerteilenummer | IPD60R3K4CEAUMA1 |
---|---|
Zukünftige Teilenummer | FT-IPD60R3K4CEAUMA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
IPD60R3K4CEAUMA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 650V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 2.6A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.4 Ohm @ 500mA, 10V |
Vgs (th) (Max) @ Id | 3.5V @ 40µA |
Gateladung (Qg) (Max) @ Vgs | 4.6nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 93pF @ 100V |
FET-Funktion | - |
Verlustleistung (max.) | 29W (Tc) |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPD60R3K4CEAUMA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | IPD60R3K4CEAUMA1-FT |
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