Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPD70R900P7SAUMA1
Herstellerteilenummer | IPD70R900P7SAUMA1 |
---|---|
Zukünftige Teilenummer | FT-IPD70R900P7SAUMA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | CoolMOS™ P7 |
IPD70R900P7SAUMA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 700V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 6A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 900 mOhm @ 1.1A, 10V |
Vgs (th) (Max) @ Id | 3.5V @ 60µA |
Gateladung (Qg) (Max) @ Vgs | 6.8nC @ 10V |
Vgs (Max) | ±16V |
Eingangskapazität (Ciss) (Max) @ Vds | 211pF @ 400V |
FET-Funktion | - |
Verlustleistung (max.) | 30.5W (Tc) |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPD70R900P7SAUMA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | IPD70R900P7SAUMA1-FT |
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