Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPD80P03P4L07ATMA1
Herstellerteilenummer | IPD80P03P4L07ATMA1 |
---|---|
Zukünftige Teilenummer | FT-IPD80P03P4L07ATMA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
IPD80P03P4L07ATMA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 80A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6.8 mOhm @ 80A, 10V |
Vgs (th) (Max) @ Id | 2V @ 130µA |
Gateladung (Qg) (Max) @ Vgs | 80nC @ 10V |
Vgs (Max) | +5V, -16V |
Eingangskapazität (Ciss) (Max) @ Vds | 5700pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 88W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPD80P03P4L07ATMA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | IPD80P03P4L07ATMA1-FT |
IPD50R280CEBTMA1
Infineon Technologies
IPD50R2K0CEAUMA1
Infineon Technologies
IPD50R2K0CEBTMA1
Infineon Technologies
IPD50R380CEATMA1
Infineon Technologies
IPD50R380CEAUMA1
Infineon Technologies
IPD50R380CEBTMA1
Infineon Technologies
IPD50R399CP
Infineon Technologies
IPD50R3K0CEAUMA1
Infineon Technologies
IPD50R3K0CEBTMA1
Infineon Technologies
IPD50R500CEATMA1
Infineon Technologies
XCV200-5FG256I
Xilinx Inc.
APA150-FGG256
Microsemi Corporation
M7A3P1000-FGG256I
Microsemi Corporation
A40MX04-1PL68
Microsemi Corporation
EP1M350F780C6
Intel
LCMXO2-2000HE-6FTG256C
Lattice Semiconductor Corporation
LFXP2-40E-6FN484I
Lattice Semiconductor Corporation
10AX066H1F34I1SG
Intel
EP1C6Q240C7N
Intel
EP1K100QC208-1GZ
Intel