Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPU60R1K4C6BKMA1
Herstellerteilenummer | IPU60R1K4C6BKMA1 |
---|---|
Zukünftige Teilenummer | FT-IPU60R1K4C6BKMA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | CoolMOS™ |
IPU60R1K4C6BKMA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Discontinued at Future Semiconductor |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 3.2A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 1.1A, 10V |
Vgs (th) (Max) @ Id | 3.5V @ 90µA |
Gateladung (Qg) (Max) @ Vgs | 9.4nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 200pF @ 100V |
FET-Funktion | Super Junction |
Verlustleistung (max.) | 28.4W (Tc) |
Betriebstemperatur | -55°C ~ 155°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | PG-TO251-3 |
Paket / fall | TO-251-3 Short Leads, IPak, TO-251AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPU60R1K4C6BKMA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | IPU60R1K4C6BKMA1-FT |
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