Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IRF6617TR1PBF
Herstellerteilenummer | IRF6617TR1PBF |
---|---|
Zukünftige Teilenummer | FT-IRF6617TR1PBF |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | HEXFET® |
IRF6617TR1PBF Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 14A (Ta), 55A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 8.1 mOhm @ 15A, 10V |
Vgs (th) (Max) @ Id | 2.35V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 17nC @ 4.5V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1300pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 2.1W (Ta), 42W (Tc) |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | DIRECTFET™ ST |
Paket / fall | DirectFET™ Isometric ST |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRF6617TR1PBF Gewicht | kontaktiere uns |
Ersatzteilnummer | IRF6617TR1PBF-FT |
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