Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IRF7702GTRPBF
Herstellerteilenummer | IRF7702GTRPBF |
---|---|
Zukünftige Teilenummer | FT-IRF7702GTRPBF |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | HEXFET® |
IRF7702GTRPBF Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 12V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 8A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 14 mOhm @ 8A, 4.5V |
Vgs (th) (Max) @ Id | 1.2V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 81nC @ 4.5V |
Vgs (Max) | ±8V |
Eingangskapazität (Ciss) (Max) @ Vds | 3470pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 1.5W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-TSSOP |
Paket / fall | 8-TSSOP (0.173", 4.40mm Width) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRF7702GTRPBF Gewicht | kontaktiere uns |
Ersatzteilnummer | IRF7702GTRPBF-FT |
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