Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IRFI4510GPBF
Herstellerteilenummer | IRFI4510GPBF |
---|---|
Zukünftige Teilenummer | FT-IRFI4510GPBF |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | HEXFET® |
IRFI4510GPBF Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 35A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 21A, 10V |
Vgs (th) (Max) @ Id | 4V @ 100µA |
Gateladung (Qg) (Max) @ Vgs | 81nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2998pF @ 50V |
FET-Funktion | - |
Verlustleistung (max.) | 42W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220AB Full-Pak |
Paket / fall | TO-220-3 Full Pack |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRFI4510GPBF Gewicht | kontaktiere uns |
Ersatzteilnummer | IRFI4510GPBF-FT |
TJ40S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ50S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ60S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ60S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ80S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ8S06M3L(T6L1,NQ)
Toshiba Semiconductor and Storage
TK100S04N1L,LQ
Toshiba Semiconductor and Storage
TK10S04K3L(T6L1,NQ
Toshiba Semiconductor and Storage
TK15S04N1L,LQ
Toshiba Semiconductor and Storage
TK20S04K3L(T6L1,NQ
Toshiba Semiconductor and Storage
XC4005E-1PQ100C
Xilinx Inc.
XC6SLX100-L1CSG484I
Xilinx Inc.
A3PN060-1VQ100I
Microsemi Corporation
10AX048K2F35E2LG
Intel
EP4S100G5F45I3
Intel
A40MX02-PLG44
Microsemi Corporation
XC7A25T-2CPG238C
Xilinx Inc.
LFEC15E-4F484C
Lattice Semiconductor Corporation
5AGXBA3D6F31C6N
Intel
EP1S40F1508C6N
Intel