Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IXFK220N17T2
Herstellerteilenummer | IXFK220N17T2 |
---|---|
Zukünftige Teilenummer | FT-IXFK220N17T2 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | GigaMOS™, HiperFET™, TrenchT2™ |
IXFK220N17T2 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 170V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 220A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 6.3 mOhm @ 60A, 10V |
Vgs (th) (Max) @ Id | 5V @ 8mA |
Gateladung (Qg) (Max) @ Vgs | 500nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 31000pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 1250W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-264AA (IXFK) |
Paket / fall | TO-264-3, TO-264AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IXFK220N17T2 Gewicht | kontaktiere uns |
Ersatzteilnummer | IXFK220N17T2-FT |
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