Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IXTT34N65X2HV
Herstellerteilenummer | IXTT34N65X2HV |
---|---|
Zukünftige Teilenummer | FT-IXTT34N65X2HV |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
IXTT34N65X2HV Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 650V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 34A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 96 mOhm @ 17A, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 54nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 3000pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 540W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-268HV |
Paket / fall | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IXTT34N65X2HV Gewicht | kontaktiere uns |
Ersatzteilnummer | IXTT34N65X2HV-FT |
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