Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IXTY1R4N100P
Herstellerteilenummer | IXTY1R4N100P |
---|---|
Zukünftige Teilenummer | FT-IXTY1R4N100P |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Polar™ |
IXTY1R4N100P Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 1000V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 1.4A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 11 Ohm @ 500mA, 10V |
Vgs (th) (Max) @ Id | 4.5V @ 50µA |
Gateladung (Qg) (Max) @ Vgs | 17.8nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 450pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 63W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-252, (D-Pak) |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IXTY1R4N100P Gewicht | kontaktiere uns |
Ersatzteilnummer | IXTY1R4N100P-FT |
FDD4685-F085
ON Semiconductor
FDD5612
ON Semiconductor
FDD5N50NZTM
ON Semiconductor
FDD5N50UTM-WS
ON Semiconductor
FDD6670A
ON Semiconductor
FDD6690A
ON Semiconductor
FDD6N50FTM
ON Semiconductor
FDD7N25LZTM
ON Semiconductor
FDD8451
ON Semiconductor
FDD8453LZ
ON Semiconductor
A3P1000L-FG484
Microsemi Corporation
M1A3P600L-FGG484
Microsemi Corporation
A54SX32A-CQ256B
Microsemi Corporation
5SEEBF45C3N
Intel
5SGXEABN2F45I2N
Intel
XC6SLX45-N3CSG324C
Xilinx Inc.
XC6SLX45T-N3CSG324C
Xilinx Inc.
LFE2M20SE-7F484C
Lattice Semiconductor Corporation
10AX090N4F40I3LG
Intel
EP2C20Q240C8N
Intel