Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / JAN2N7334
Herstellerteilenummer | JAN2N7334 |
---|---|
Zukünftige Teilenummer | FT-JAN2N7334 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Military, MIL-PRF-19500/597 |
JAN2N7334 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 4 N-Channel |
FET-Funktion | Standard |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 1A |
Rds On (Max) @ Id, Vgs | 700 mOhm @ 600mA, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 60nC @ 10V |
Eingangskapazität (Ciss) (Max) @ Vds | - |
Leistung max | 1.4W |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Paket / fall | 14-DIP (0.300", 7.62mm) |
Supplier Device Package | MO-036AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN2N7334 Gewicht | kontaktiere uns |
Ersatzteilnummer | JAN2N7334-FT |
FDC6301N_G
ON Semiconductor
FDG6301N-F085P
ON Semiconductor
FDG6303N-F169
ON Semiconductor
FDG6303N_G
ON Semiconductor
FDG6304P-F169
ON Semiconductor
FDG6304P-X
ON Semiconductor
FDG6321C-F169
ON Semiconductor
FDG6332C-F085P
ON Semiconductor
FDMA2002NZ_F130
ON Semiconductor
FDMB3900N
ON Semiconductor
LCMXO2-640HC-4TG100I
Lattice Semiconductor Corporation
AGLN030V2-ZUCG81I
Microsemi Corporation
M1A3P1000L-1FGG484I
Microsemi Corporation
EP20K300EFC672-1N
Intel
EPF10K200SFC672-2
Intel
EP3C5F256C7N
Intel
5SGXMA5N3F40C2N
Intel
LCMXO2-4000ZE-3FTG256C
Lattice Semiconductor Corporation
EP4CGX22CF19C7N
Intel
EP20K200EQC208-2
Intel