Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / NMSD200B01-7
Herstellerteilenummer | NMSD200B01-7 |
---|---|
Zukünftige Teilenummer | FT-NMSD200B01-7 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
NMSD200B01-7 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 200mA (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 50mA, 5V |
Vgs (th) (Max) @ Id | 3V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 50pF @ 25V |
FET-Funktion | Schottky Diode (Isolated) |
Verlustleistung (max.) | 200mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SOT-363 |
Paket / fall | 6-TSSOP, SC-88, SOT-363 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NMSD200B01-7 Gewicht | kontaktiere uns |
Ersatzteilnummer | NMSD200B01-7-FT |
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