Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Single / NSS60600MZ4T3G
Herstellerteilenummer | NSS60600MZ4T3G |
---|---|
Zukünftige Teilenummer | FT-NSS60600MZ4T3G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
NSS60600MZ4T3G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Transistortyp | PNP |
Stromabnehmer (Ic) (max.) | 6A |
Spannung - Durchschlag Kollektoremitter (max.) | 60V |
Vce-Sättigung (max.) @ Ib, Ic | 350mV @ 600mA, 6A |
Strom - Kollektorabschaltung (max.) | 100nA (ICBO) |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 120 @ 1A, 2V |
Leistung max | 800mW |
Frequenz - Übergang | 100MHz |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | TO-261-4, TO-261AA |
Supplier Device Package | SOT-223 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSS60600MZ4T3G Gewicht | kontaktiere uns |
Ersatzteilnummer | NSS60600MZ4T3G-FT |
NSV2029M3T5G
ON Semiconductor
NSV2SC5658M3T5G
ON Semiconductor
NSVMMBT5551M3T5G
ON Semiconductor
NSVBC856BM3T5G
ON Semiconductor
NSV2SA2029M3T5G
ON Semiconductor
NSS40200UW6T1G
ON Semiconductor
MJD31C1G
ON Semiconductor
MJD42C1G
ON Semiconductor
MJD253-1G
ON Semiconductor
MJD112-1G
ON Semiconductor
LCMXO2-1200ZE-1TG100CR1
Lattice Semiconductor Corporation
M1A3P1000-2FGG484
Microsemi Corporation
A3P1000-FG256
Microsemi Corporation
A3P600-2PQG208I
Microsemi Corporation
LFE5UM-85F-7BG554I
Lattice Semiconductor Corporation
EP20K600EFC672-3
Intel
5SGSED8K3F40C2LN
Intel
EP3SE80F1152I3
Intel
XA7A50T-1CSG324I
Xilinx Inc.
EPF10K200SBC356-1X
Intel