Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / RN2711(TE85L,F)
Herstellerteilenummer | RN2711(TE85L,F) |
---|---|
Zukünftige Teilenummer | FT-RN2711(TE85L,F) |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RN2711(TE85L,F) Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Transistortyp | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 10 kOhms |
Widerstand - Emitterbasis (R2) | - |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 400 @ 1mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 250µA, 5mA |
Strom - Kollektorabschaltung (max.) | 100nA (ICBO) |
Frequenz - Übergang | 200MHz |
Leistung max | 200mW |
Befestigungsart | Surface Mount |
Paket / fall | 5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package | USV |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2711(TE85L,F) Gewicht | kontaktiere uns |
Ersatzteilnummer | RN2711(TE85L,F)-FT |
RN2711JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2712JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2713JE(TE85L,F)
Toshiba Semiconductor and Storage
RN1703JE(TE85L,F)
Toshiba Semiconductor and Storage
RN1705JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2701JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2703JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2704JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2705JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2707JE(TE85L,F)
Toshiba Semiconductor and Storage
XC2S100E-6TQ144C
Xilinx Inc.
LFEC3E-3T100I
Lattice Semiconductor Corporation
XC2V6000-6FFG1517C
Xilinx Inc.
EP4SGX530HH35C3ES
Intel
XC5VLX30T-1FFG665C
Xilinx Inc.
XA6SLX45-2CSG324I
Xilinx Inc.
M1AGL1000V2-FG144I
Microsemi Corporation
5CGXFC4C7U19C8N
Intel
10AX115S3F45E2SG
Intel
EP1S40F780C5N
Intel